发光二极管
光电子学
材料科学
二极管
宽禁带半导体
可见光通信
波长
光通信
作者
Arman Rashidi,Morteza Monavarian,Andrew Aragon,Serdal Okur,Mohsen Nami,Ashwin K. Rishinaramangalam,Saadat Mishkat‐Ul‐Masabih,Daniel Feezell
标识
DOI:10.1109/lpt.2017.2650681
摘要
Free-standing nonpolar GaN substrates provide an excellent platform for the fabrication of high-speed blue and green light-emitting diodes (LEDs), which are attractive for visible-light communication, plastic optical fiber communication, and short-range under water optical communication. Nonpolar LEDs on free-standing GaN exhibit a large electron-hole wave function overlap, low extended defect density, and favorable thermal properties. Here, we demonstrate high-speed nonpolar InGaN/GaN LEDs with a peak emission wavelength between 455 and 465 nm on free-standing nonpolar GaN substrates. A large frequency modulation bandwidth of 524 MHz is demonstrated at a current density of 10 kA/cm 2 .
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