The Interaction Challenges with Novel Materials in Developing High‐Performance and Low‐Leakage High‐ k /Metal Gate CMOS Transistors

This chapter contains sections titled: Introduction Traditional CMOS Integration Processes High-k/Metal Gate Integration Processes Mobility Metal Electrodes and Effective Work Function Tinv Scaling and Impacts on Gate Leakage and Effective Work Function Ambients and Oxygen Vacancy-Induced Modulation of Threshold Voltage Reliability Conclusions References