薄膜
带隙
锡
电阻率和电导率
分析化学(期刊)
基质(水族馆)
材料科学
沉积(地质)
结晶
热解
体积流量
化学
纳米技术
光电子学
冶金
有机化学
工程类
古生物学
海洋学
物理
量子力学
沉积物
地质学
电气工程
生物
作者
Dalia Martínez-Escobar,Manoj Ramachandran,A. Sánchez-Juárez,Jorge Sergio Narro-Rios
标识
DOI:10.1016/j.tsf.2012.12.081
摘要
Tin diselenide thin films were prepared by spray pyrolysis technique using SnCl2·H2O and 1,1-dimethyl-2-selenourea as precursor compounds with a Se:Sn atomic ratio of 1:1 in the starting solution. The deposition process was carried out in the substrate temperature range of 275 °C to 400 °C using two solution flow rates of 5 ml/min and 8 ml/min. The phases of SnSe2 were obtained when the deposition was carried ou at a flow rate of 5 ml/min, while for the films deposited at 8 ml/min mixed phases of SnSe2/SnSe were observed. Heat treatment of the deposited SnSe2/SnSe thin films in an atmosphere of 95% N2 and 5% H2 led to crystallization of the SnSe compound. The as deposited SnSe2 thin films have an optical band gap of 1.59 eV with n-type electrical conductivity in the range of 10− 1 (Ω cm)− 1 to 101 (Ω cm)− 1. The annealed thin films have an optical band gap of 0.81 eV and show p-type electrical conductivity of 2 × 10− 1 (Ω cm)− 1.
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