负偏压温度不稳定性
静态随机存取存储器
可靠性(半导体)
制作
降级(电信)
电压
阈值电压
材料科学
PMOS逻辑
压力(语言学)
电子工程
低压
可靠性工程
电气工程
计算机科学
光电子学
晶体管
工程类
物理
功率(物理)
医学
替代医学
量子力学
病理
语言学
哲学
作者
Nurul Ezaila Alias,Anil Kumar,Takuya Saraya,Shinji Miyano,Toshiro Hiramoto
标识
DOI:10.1587/transele.e96.c.620
摘要
In this paper, negative bias temperature instability (NBTI) reliability of pFETs is analyzed under the post-fabrication SRAM self-improvement scheme that we have developed recently, where cell stability is self-improved by simply applying high stress voltage to supply voltage terminal (VDD) of SRAM cells. It is newly found that there is no significant difference in both threshold voltage and drain current degradation by NBTI stress between fresh PFETs and PFETs after self-improvement scheme application, indicating that the self-improvement scheme has no critical reliability problem.
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