可靠性(半导体)
氮化镓
电力电子
晶体管
高电子迁移率晶体管
功率半导体器件
计算机科学
数码产品
电气工程
材料科学
功率(物理)
电子工程
工程类
电压
纳米技术
物理
图层(电子)
量子力学
作者
Asif Imran Emon,Mustafeez Ul Hassan,Abdul Basit Mirza,John Kaplun,Sama Salehi Vala,Fang Luo
出处
期刊:IEEE Journal of Emerging and Selected Topics in Power Electronics
[Institute of Electrical and Electronics Engineers]
日期:2023-06-01
卷期号:11 (3): 2707-2729
被引量:5
标识
DOI:10.1109/jestpe.2022.3232265
摘要
Wide bandgap (WBG) devices are a desirable choice for high-density energy conversion systems. In high-speed hard-switching applications, voltage overshoot across device terminals, oscillations at gate loop, and electromagnetic interference (EMI) become harder to mitigate, and the overall system reliability is reduced. To address the key challenges and harness the benefits offered by these latest generations of devices, improved and advanced packaging structures are required, as packaging technology often has a critical impact on module performance and reliability. This article summarizes the design procedure for power modules, essential parts, and available materials for the fabrication of a power module package. Moreover, it provides a review of commercially available gallium nitride-based high electron mobility transistors (GaN HEMTs) and state-of-the-art module packaging technologies adopted for them with a focus on module layout, module integration trends, and identifying their impacts on the GaN HEMT’s performance. Through this review, this article also discusses major challenges faced by designers with GaN HEMTs in power electronics applications and their potential solutions, which is critical for the mainstream adoption of GaN HEMTs and defining the future technology roadmap.
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