材料科学
三氧化钼
氧化铟锡
单层
钼
有机太阳能电池
锡
铟
纳米技术
氧化物
氧化钼
三氧化钨
化学工程
无机化学
光电子学
冶金
复合材料
钨
薄膜
化学
工程类
聚合物
作者
Xiong Xiao-ying,Bin Hu,Shuya Tai,Guanghao Lu,Huiting Fu,Qingdong Zheng
标识
DOI:10.1002/adfm.202505515
摘要
Abstract Self‐assembled monolayers (SAMs) have recently emerged as promising candidates for interfacial materials in organic photovoltaics (OPVs). However, the quality and integrity of SAM growth are significantly influenced by the surface morphology of indium tin oxide (ITO) substrates, which can compromise the performance and reproducibility of OPVs. To achieve controlled and high‐quality SAMs assembly, this study presents an effective strategy to eliminate the sensitivity of SAM growth to polycrystalline ITO by depositing an amorphous molybdenum trioxide (MoO 3 ) thin layer on top. The application of MoO 3 can homogenize surface roughness and circumvent issues related to preferential grain orientation and distinct grain boundaries associated with ITO. This results in a more uniform and denser SAM coverage compared to direct growth on bare ITO. Consequently, the resulting OPVs based on the PM6/BTP‐eC9 system exhibit an outstanding power conversion efficiency of 19.9% (certified at 19.3%), primarily due to reduced interfacial defects and optimized active layer morphology. More importantly, the introduction of MoO 3 between ITO and SAMs enhances the reproducibility of efficiency and the long‐term stability of devices compared to those based solely on SAMs. This progress highlights the importance of refining the ITO surface microstructure to facilitate favorable SAM formation and subsequently construct high‐performance OPVs.
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