Interface Trap‐Free, 100% Yield, Wafer‐Scale, Non‐Volatile Optically‐Guided Memory Array from Cumulatively‐Stacked Small Molecules/Fluoropolymer/Copper‐Oxide Nanoparticles Heterostructure

Abstract Optically‐guided memory devices, with its photo‐response, allow for photodetector and memory functions to be combined in a single device. As a result, the issue of unnecessary signal delay can be alleviated by reducing the metal wire between the photodetector and the memory device, and the function of two different devices can be performed simultaneously, which enables an image recognition system to be miniaturized. With such advantages, optically‐guided memory is therefore considered to be highly promising as a potential key component for next‐generation applications where image detection and processing capabilities are paramount. Here, a wafer‐scale 12 × 12 dinaphtho[2,3‐ b :2′,3′‐f]thieno[3,2‐ b ]thiophene (DNTT)‐based optically‐guided memory transistors (OMT) array with a cumulatively stacked small‐molecules/fluoropolymer/copper‐oxide nanoparticles structure is demonstrated. The proposed OMT is formed in 4 different states depending on the light intensity. Furthermore, read current ( I Read ) and threshold voltage ( V th ) in the programming state (P‐state) of OMT is maintained stably even after 20 days. Based on the optimized DNTT thickness, a wafer‐scale 12 × 12 OMT array is fabricated consisting of 144 devices for text image detection with 100% yield. This study also demonstrates a text image detection with non‐volatile memory characteristics depending on the presence or absence of light irradiation.