材料科学
兴奋剂
掺杂剂
电致变色
光电子学
带隙
铟
电致变色装置
电极
电阻率和电导率
旋涂
薄板电阻
纳米技术
导电体
透射率
薄膜
复合材料
图层(电子)
化学
电气工程
物理化学
工程类
作者
Yuechan Li,Yuejie Li,Xiuxiu Li,Yongli Li,Fei Yang,Yujie Yan,Ahmad Umar,Ahmed A. Ibrahim,An Xie
出处
期刊:Journal of Nanoelectronics and Optoelectronics
[American Scientific Publishers]
日期:2023-11-01
卷期号:18 (11): 1265-1273
标识
DOI:10.1166/jno.2023.3525
摘要
The quest for indium-free transparent conductive electrodes with enhanced optical band gaps and superior electrical conductivity is imperative for the advancement of flexible electrochromic devices. This study presents a groundbreaking approach wherein composite ZnO films, incorporating Mg and/or B dopants through a facile sol–gel spin coating method, are meticulously crafted and systematically scrutinized for their optoelectrical properties. Our findings reveal that Mg doping primarily influences the optical band gap, while B doping facilitates the augmentation of free electrons by modulating morphology and electronic defect states. Optimal performance is achieved with pure Mg doping at an atomic molar concentration of 0.2, resulting in a ZnMgO film boasting an exceptional average transmittance of 98.79% and an impressively low electrical resistivity of 15.3 Ω·cm. Although pure B doping compromises the crystalline quality, it significantly reduces electrical resistivity. Intriguingly, co-doping with Mg at an atomic molar concentration of 0.2 introduces challenges to crystalline quality but enriches the composite film with additional charge carriers, leading to a reduction in bandgap and a remarkable drop in resistance to 6.2 Ω·cm. This innovative work not only sheds light on the delicate balance between Mg and B doping in ZnO films but also paves the way for unparalleled opportunities in the development of high-performance transparent conductive electrodes for flexible electrochromic devices.
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