Ferroelectric Polarization Coupling Effect in BiFeO3/α‐In2Se3 Ferroelectric Field Effect Transistor for Stable Non‐volatile Memory

Ferroelectric field-effect transistors (FeFETs) commonly utilize traditional oxide ferroelectric materials for their strong remanent polarization. Yet, integrating them with the standard complementary metal oxide semiconductor (CMOS) process is challenging due to the need for lattice matching and the high-temperature rapid thermal annealing process, which are not always compatible with CMOS fabrication. However, the advent of the ferroelectric semiconductor α-In