Crystallinity improvement of physical-vapor-deposited WS2 films by controlling particle energy

Abstract High-crystallinity WS 2 thin films are crucial for their applications in next-generation electronic devices, particularly in logic transistors. Consequently, a physical vapor deposition (PVD) is a promising method for achieving such films because of its scalability and precise control over deposition conditions. In this study, WS 2 thin film crystallinity has been investigated by controlling particle energy during the PVD process. The scattering of particles is influenced by Ar pressure, in which a throw distance of the particles is determined. The target-substrate (T-S) distance was set in conjunction with the throw distance in terms of the composition and energy of the particles at the surface on the wafer. The crystallinity of the deposited films was assessed through Raman spectroscopy, X-ray photoelectron spectroscopy, and circular transmission line method measurements. Controlling of T-S distance and Ar pressure effectively minimized film damage during the PVD process, resulting in crystallinity improvement. Therefore PVD-WS 2 films hold significant potential for various applications in next-generation logic transistors.