超导电性
凝聚态物理
拓扑(电路)
Wannier函数
物理
拓扑序
电子结构
声子
联轴节(管道)
电子能带结构
拓扑绝缘体
材料科学
量子力学
量子
组合数学
数学
冶金
作者
Tengdong Zhang,Rui Fan,Yan Gao,Yanling Wu,Xiaodan Xu,Dao‐Xin Yao,Jun Li
标识
DOI:10.1088/1674-1056/ada432
摘要
Abstract Transition metal dichalcogenides (TMDs), exhibit a range of crystal structures and topological quantum states. The 1T phase, in particular, shows promise for superconductivity driven by electron–phonon coupling (EPC), strain, pressure, and chemical doping. In this theoretical investigation, we explore 1T-RhSeTe as a novel type of TMD superconductor with topological electronic states. The optimal doping structure and atomic arrangement of 1T-RhSeTe are constructed. Phonon spectrum calculations validate the integrity of the constructed doping structure. The analysis of the electron–phonon coupling using the electron–phonon Wannier (EPW) method has confirmed the existence of a robust electron–phonon interaction in 1T-RhSeTe, resulting in total EPC constant λ = 2.02, the logarithmic average frequency ω log = 3.15 meV and T c = 4.61 K, consistent with experimental measurements and indicative of its classification as a BCS superconductor. The band structure analysis revealed the presence of Dirac-like band crossing points. The topological non-trivial electronic structures of the 1T-RhSeTe are confirmed via the evolution of Wannier charge centers (WCCs) and time-reversal symmetry-protected topological surface states (TSSs). These distinctive properties underscore 1T-RhSeTe as a possible candidate for a topological superconductor, warranting further investigation into its potential implications and applications.
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