光电二极管
光电子学
材料科学
量子点
暗电流
硅
带隙
量子效率
图层(电子)
光学
光电探测器
纳米技术
物理
作者
Linxiang Zhang,Long Chen,Junrui Yang,Jing Liu,Shuaicheng Lu,Xinyi Liang,Xuezhi Zhao,Yang Yang,Jun Hu,Long Hu,Xinzheng Lan,Jianbing Zhang,Liang Gao,Jiang Tang
出处
期刊:Nano Letters
[American Chemical Society]
日期:2023-07-11
卷期号:23 (14): 6489-6496
被引量:1
标识
DOI:10.1021/acs.nanolett.3c01391
摘要
Solution-processed colloidal quantum dot (CQD) photodiodes are compatible for monolithic integration with silicon-based readout circuitry, enabling ultrahigh resolution and ultralow cost infrared imagers. However, top-illuminated CQD photodiodes for longer infrared imaging suffer from mismatched energy band alignment between narrow-bandgap CQDs and the electron transport layer. In this work, we designed a new top-illuminated structure by replacing the sputtered ZnO layer with a SnO2 layer by atomic layer deposition. Benefiting from matched energy band alignment and improved heterogeneous interface, our top-illuminated CQD photodiodes achieve a broad-band response up to 1650 nm. At 220 K, these SnO2-based devices exhibit an ultralow dark current density of 3.5 nA cm-2 at -10 mV, reaching the noise limit for passive night vision. The detectivity is 4.1 × 1012 Jones at 1530 nm. These SnO2-based devices also demonstrate exceptional operation stability. By integrating with silicon-based readout circuitry, our CQD imager realizes water/oil discrimination and see-through smoke imaging.
科研通智能强力驱动
Strongly Powered by AbleSci AI