Self-Powered High Performance AlGaN-Based Solar Blind UV MSM Photodetector

In this research article, we attempt to show the performance of a self-powered Aluminum Gallium Nitride (AlGaN)-based solar-blind ultraviolet (SBUV) metal-semiconductor-metal photodetector. The excellent crystalline quality of the AlGaN film is evidenced by its low screw threading dislocation density ($\sim 10^{8}$), which suppresses the dark current in the order of$\mathbf{p A}$(i.e.,$\mathbf{1. 0 2} \mathbf{~ p A}$) and enhances the photocurrent$\left(4 \times 10^{-10} ~\mathrm{A}\right)$. The device achieves a sensitivity greater than 102, a responsivity of$1.2 ~\text{mA} / \mathrm{W}$, and a detectivity of$2.42 \times 10^{8}$Jones at 0 V bias. Hence, the device's low dark current, high sensitivity, excellent responsivity, and strong detection capability at zero bias establish AlGaN as a highly promising material for self-powered SBUV detection applications.