碳化硅
材料科学
电压
电气工程
硅
光电子学
电力电子
数码产品
工程物理
高压
宽禁带半导体
电子工程
工程类
冶金
作者
Morten Rahr Nielsen,Shiyue Deng,Abdul Basit Mirza,Benjamin Futtrup Kjærsgaard,Asger Bjørn Jørgensen,Hongbo Zhao,Yang Li,Stig Munk‐Nielsen,Fang Luo
标识
DOI:10.1109/tpel.2024.3442483
摘要
With the electrification of society and the green transition, the need for efficient high-power electronic converters (PEC) to support the electricity demand is at an all-time high. A key enabler is the emerging medium voltage (MV) siliconcarbide (SiC) semiconductor devices, which offer improved static and dynamic performance compared to their silicon (Si)counterparts. This paper presents a thorough overview of the recent advancements within the MV SiC technology, examining both available semiconductor devices and power modules from industry and academia and directly associates them to their applicability through a comprehensive review of typical highpower electronic applications.
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