A high‐PCE amalgamate charge pump topology with extended input voltage dynamic range for energy harvesting systems

Abstract This paper presents a novel extended input voltage dynamic range (IVDR) amalgamate charge pump (CP) for energy harvesting systems. The proposed amalgamate CP adaptively switches its charge transfer transistor into switch and diode connection based on the input voltage, effectively enhancing the power conversion efficiency (PCE) over a wide input voltage range. Implemented in 65 nm CMOS technology, the post‐layout results demonstrate a PCE exceeding 40% within the input voltage range of 0.36–0.85 V, under 60 kΩ load. The design achieves an extended IVDR of 0.49 V with a peak PCE of 50.02% observed at an input voltage of 0.45 V. The proposed amalgamate CP design features two distinct charge transfer transistor connections, leveraging the strength of Dickson CP with low reversion loss in high input voltage range and the low conduction loss of cross‐coupled CP (CCCP) in low input voltage range, thereby extending the input voltage operation range of conventional CP.