薄膜晶体管
材料科学
晶体管
氧化铟锡
光电子学
图层(电子)
氧化物薄膜晶体管
电子工程
纳米技术
工程物理
电气工程
计算机科学
工程类
电压
作者
Fuze Chen,Meng Zhang,Yunhao Wan,Xinguang Xu,Man Wong,Hoi‐Sing Kwok
出处
期刊:Journal of Semiconductors
[IOP Publishing]
日期:2023-09-01
卷期号:44 (9): 091602-091602
被引量:1
标识
DOI:10.1088/1674-4926/44/9/091602
摘要
Abstract Indium-tin-zinc oxide (ITZO) thin-film transistor (TFT) technology holds promise for achieving high mobility and offers significant opportunities for commercialization. This paper provides a review of progress made in improving the mobility of ITZO TFTs. This paper begins by describing the development and current status of metal-oxide TFTs, and then goes on to explain the advantages of selecting ITZO as the TFT channel layer. The evaluation criteria for TFTs are subsequently introduced, and the reasons and significance of enhancing mobility are clarified. This paper then explores the development of high-mobility ITZO TFTs from five perspectives: active layer optimization, gate dielectric optimization, electrode optimization, interface optimization, and device structure optimization. Finally, a summary and outlook of the research field are presented.
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