Self-Powered ε-GaO Schottky Photodiode Array Featuring High External Quantum Efficiency Toward Solar-Blind UV Imaging

In this work, a Ga ₂ O ₃ -based Schottky photodiode array is fabricated and discussed, towards solar-blind UV image sensing application. The Ga ₂ O ₃ thin film was prepared by metalorganic chemical vapor deposition, and the array was constructed via UV photolithography technique. Excited by 254 nm solar-blind UV light, the photodiode unit has responsivity, external quantum efficiency, and specific detectivity of 35.1 A/W, 1.7×10 ⁴ % and 1.6×10 ¹⁴ Jones at -10 V; and of 0.17 A/W, 83% and 1.94×10 ¹³ Jones at 0 V. This indicates that it is a self-powered photodetector with high photo-response. The high external quantum efficiency at 0 V suggest a high-efficient photon-electron conversion efficiency. In addition, the multi-pixels photodiode array exhibited low current deviation of 6.5% towards high-resolution and low chromatic aberration image sensing.