Engineering an atomic-level crystal lattice and electronic band structure for an extraordinarily high average thermoelectric figure of merit in n-type PbSe

Multiscale defect structures driven by interstitial Cu, off-centered Pb and Se atoms and scarce anion vacancies in the new Cu x Pb(Se 0.8 Te 0.2 ) 0.95 give a record-high average ZT among all polycrystalline n-type thermoelectric materials due to high PF.