范德瓦尔斯力
准粒子
密度泛函理论
GW近似
带隙
电子能带结构
物理
电子结构
凝聚态物理
格子(音乐)
局部密度近似
混合功能
量子力学
材料科学
分子
超导电性
声学
作者
Kirsten Govaerts,R. Saniz,B. Partoens,D. Lamoen
标识
DOI:10.1103/physrevb.87.235210
摘要
In this work we have investigated the structural and electronic properties of SnO, which is built up from layers kept together by van der Waals (vdW) forces. The combination of a vdW functional within density functional theory (DFT) and quasiparticle band structure calculations within the $GW$ approximation provides accurate values for the lattice parameters, atomic positions, and the electronic band structure including the fundamental (indirect) and the optical (direct) band gap without the need of experimental or empirical input. A systematic comparison is made between different levels of self-consistency within the $GW$ approach ${$following the scheme of Shishkin et al. [Phys. Rev. B 75, 235102 (2007)]$}$ and the results are compared with DFT and hybrid functional results. Furthermore, the effect of the vdW-corrected functional as a starting point for the $GW$ calculation of the band gap has been investigated. Finally, we studied the effect of the vdW functional on the electron charge density.
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