Lv55
1520 积分 2023-12-14 加入
HTRB failure mechanism of 1200 V SiC MOSFET induced by abnormal electric field distribution in FLR termination
28分钟前
已完结
Van der Waals epitaxy of β-Ga2O3 films on polycrystalline diamond substrates enabled by graphene interlayer for efficient thermal management
1天前
待确认
Heterogeneous integration of β-Ga2O3 and polycrystalline diamond via SiC and SiO2 interlayers with optimized adhesion and thermal boundary resistance for power-electronic applications
1天前
待确认
2.1 kV (001)- β -Ga2O3 vertical Schottky barrier diode with high-k oxide field plate
10天前
已完结
Insulating electromagnetic-shielding silicone compound enables direct potting electronics
10天前
已完结
Packaging and integration of silicon carbide power devices
10天前
已完结
1.6 kV Vertical Ga2O3 FinFETs With Source-Connected Field Plates and Normally-off Operation
1个月前
已完结
Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing
1个月前
已完结
Comparative study of the electrical, thermal, and reliability behavior of pressure contact technology on SiC chips
1个月前
已完结
Chip packaging interaction of SiC junction barrier Schottky diode packages
1个月前
已完结
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