亚氧化物
硅
反应性(心理学)
成核
材料科学
氧化硅
基质(水族馆)
氧化物
结晶学
纳米结构
化学物理
纳米技术
原子物理学
物理
化学
光电子学
氮化硅
冶金
替代医学
病理
地质学
海洋学
热力学
医学
作者
R. Q. Zhang,Tianshu Chu,Ho-Fai Cheung,Ning Wang,Sangmin Lee
出处
期刊:Physical review
[American Physical Society]
日期:2001-08-28
卷期号:64 (11)
被引量:63
标识
DOI:10.1103/physrevb.64.113304
摘要
The recent silicon-oxide-assisted formation of Si nanostructures has been studied based on quantum-mechanical calculations of ${\mathrm{Si}}_{n}{\mathrm{O}}_{m}$ $(n,m=1--8)$ clusters. We found that (1) energetically the most favorable small silicon-oxide clusters have O atomic ratios at around 0.6, and (2) remarkably high reactivity at the Si atoms exists in silicon suboxide ${\mathrm{Si}}_{n}{\mathrm{O}}_{m}$ clusters with $2n>m.$ The results show that the formation of Si-Si bonds is preferred and thus facilitates the nucleation of Si nanostructures when silicon suboxide clusters come together or stack to a substrate.
科研通智能强力驱动
Strongly Powered by AbleSci AI