Kurt Ronse,Eric Hendrickx,M. Goethals,R. Jonckheere,Geert Vandenberghe
标识
DOI:10.1109/vtsa.2009.5159309
摘要
In this paper, the experiences on full field EUVL lithography are reviewed. Besides the imaging performance of the EUV ADT at IMEC, also the progress in resists and reticles are discussed and compared to the production requirements for EUV lithography.