Blue-light-enhanced avalanche photodiode with a multi-finger grating structure for fluorescence detection

光学 雪崩光电二极管 材料科学 栅栏 荧光 光电二极管 光电子学 探测器 物理
作者
Zhixiang Cao,Jian Yang,yang Wang,Ruiqian Mao,Rongqing Yi,Xiangliang Jin
出处
期刊:Applied Optics [Optica Publishing Group]
卷期号:63 (2): 450-450
标识
DOI:10.1364/ao.506427
摘要

The responsiveness of the photodetectors is critical to the accuracy of the fluorescent fiber optical temperature sensor. However, the current gain and signal-to-noise ratio (SNR) of traditional photodiodes (PDs) is low, which makes it difficult to meet the high-precision detection requirements of the system. In response to the above problems, this paper achieves a novel, to the best of our knowledge, multi-finger grating (MFG) avalanche photodiode (APD). The device combines the polysilicon gate and the space charge region formed by P+/N-Well to detect photon signals. The conversion capability of the photodetector can be significantly enhanced by the MFG structure. The principle of the device is simulated and verified by technology-computer-aided design (TCAD). The standard grating APD (SG-APD), 2-finger grating APD (2FG-APD), 3-finger grating APD (3FG-APD), and 4-finger grating APD (4FG-APD) are fabricated based on 0.18 µm CMOS process. The optoelectronic detection characteristics of these devices are analyzed by establishing an optoelectronic test platform. At 480 nm, the responsivity of 2FG-APD, 3FG-APD, and 4FG-APD increases by 79.3%, 96.9%, and 70.2%, respectively, compared to SG-APD (4.021 A/W). The test results indicate that 3FG-APD exhibits a strong photon response in the blue light range. The device has broad application prospects in the field of fluorescence detection.
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