异质结
材料科学
光电流
铁电性
光电子学
极化
极化(电化学)
光电探测器
电介质
化学
物理化学
作者
Zhuokun Han,Boyong Zhang,Fenglin Wang,Bingcheng Luo,Shuanhu Wang,Wei Zhai,Jianyuan Wang
摘要
Ferroelectric heterostructures hold great promise for developing multifunctional memristors and optoelectronic devices. In this study, we report a ferroelectrically modulated photoresponse and optically modulated electroresistance behaviors in the Pt/PbZr0.2Ti0.8O3(PZT)/Nb-doped SrTiO3 (NSTO) heterostructure. The short-circuit photocurrent rises from 28 nA (after poling at +5 V) to 345 nA (after poling at −5 V) when illuminated with 360 nm of 10 mW·cm−2, exhibiting a massive photocurrent variation ratio of 1230%. This result can be attributed to the modulation of the ferroelectric polarization on the built-in field at the PZT/NSTO interface, which impacts the separation of photogenerated carriers. Furthermore, the heterostructure has a large high/low resistance ratio of 6 × 105%, which decreases to 2 × 104% when illuminated with 360 nm light. This finding is attributed to ferroelectric polarization and light illumination modulating the barrier height and width. Overall, this research suggests a promising strategy for developing self-powered heterojunction photodetectors and multifunctional memory devices.
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