降级(电信)
钙钛矿(结构)
机制(生物学)
材料科学
接口(物质)
化学工程
光电子学
纳米技术
计算机科学
物理
复合材料
量子力学
电信
毛细管数
毛细管作用
工程类
作者
Changling Zhan,Chao Luo,Feng Gao,Xianjin Wang,Peng Gao,Yabin Ma,Keli Wang,Jiandong He,Zhuye Bi,Yingzhuang Ma,Qing Zhao,Yingzhuang Ma,Qing Zhao
出处
期刊:Small
[Wiley]
日期:2025-05-20
卷期号:21 (29): e2502989-e2502989
被引量:2
标识
DOI:10.1002/smll.202502989
摘要
The interfaces of perovskite film are most susceptible to degradation during perovskite solar cell (PSC) operation. Previous efforts mainly focused on the degradation pathways of either independent upper or buried interfaces, while thorough and meticulous consideration of the disparity in electrical bias and light field difference between these interfaces during operation still remains unexplored. Herein, it is uncovered that the electrical bias significantly influences the operation degradation of perovskite interfaces in both n-i-p and p-i-n PSCs. More pronounced degradation has been found at the positive bias interface (perovskite/hole transporting layer interface) compared to the negative bias interface (perovskite/electron transporting layer interface). In the case of n-i-p PSCs, more severe degradation is mainly due to the electrochemical oxidation reaction catalyzed by diffused gold with high concentration of photogenerated holes at the positive bias interface. For p-i-n PSCs, the electrochemical oxidation reaction still occurs at the positive bias interface, inducing direct oxidation of silver with iodine species and photogenerated holes into silver iodide. Moreover, the incident light synergistically contributes to positive bias interface degradation in p-i-n PSCs. This work provides valuable guidance for understanding the degradation mechanism of different perovskite interfaces under different physical and chemical environment during device operation.
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