Charge carrier management via semiconducting matrix for efficient self-powered quantum dot infrared photodetectors

Abstract Quantum dot (QD)-based infrared photodetector is a promising technology that can implement current monitoring, imaging and optical communication in the infrared region. However, the photodetection performance of self-powered QD devices is still limited by their unfavorable charge carrier dynamics due to their intrinsically discrete charge carrier transport process. Herein, we strategically constructed semiconducting matrix in QD film to achieve efficient charge transfer and extraction. The p-type semiconducting CuSCN was selected as energy-aligned matrix to match the n-type colloidal PbS QDs that was used as proof-of-concept. Note that the PbS QD/CuSCN matrix not only enables efficient charge carrier separation and transfer at nano-interfaces but also provides continuous charge carrier transport pathways that are different from the hoping process in neat QD film, resulting in improved charge mobility and derived collection efficiency. As a result, the target structure delivers high specific detectivity of 4.38 × 10 12 Jones and responsivity of 782 mA/W at 808 nm, which is superior than that of the PbS QD-only photodetector (4.66 × 10 11 Jones and 338 mA/W). This work provides a new structure candidate for efficient colloidal QD based optoelectronic devices.