铁电性
材料科学
微电子
极化(电化学)
非易失性存储器
纳米技术
薄脆饼
柔性电子器件
光电子学
数码产品
电介质
电气工程
工程类
物理化学
化学
作者
Mingsheng Xu,Chenxu Sheng,Qiuyi Zhang,Xiaojie Zhou,Bobo Tian,Luqiu Chen,Yichen Cai,Jianping Li,Jiao Wang,Yongfa Xie,Xinxia Qiu,Wenchong Wang,Shisheng Xiong,Chunxiao Cong,Zhi-Jun Qiu,Ran Liu,Laigui Hu
出处
期刊:Small
[Wiley]
日期:2022-09-26
卷期号:18 (45): 2203882-2203882
标识
DOI:10.1002/smll.202203882
摘要
Molecular ferroelectrics (MFs) have been proven to demonstrate excellent properties even comparable to those of inorganic counterparts usually with heavy metals. However, the validation of their device applications is still at the infant stage. The polycrystalline feature of conventionally obtained MF films, the patterning challenges for microelectronics and the brittleness of crystalline films significantly hinder their development for organic integrated circuits, as well as emerging flexible electronics. Here, a large-area flexible memory array is demonstrated of oriented molecular ferroelectric single crystals (MFSCs) with nearly saturated polarization. Highly-uniform MFSC arrays are prepared on large-scale substrates including Si wafers and flexible substrates using an asymmetric-wetting and microgroove-assisted coating (AWMAC) strategy. Resultant flexible memory arrays exhibit excellent nonvolatile memory properties with a low-operating voltage of <5 V, i.e., nearly saturated ferroelectric polarization (6.5 µC cm-2 ), and long bending endurance (>103 ) under various bending radii. These results may open an avenue for scalable flexible MF electronics with high performance.
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