In situ fabrication of self-filtered near-infrared Ti3C2Tx/n-Si Schottky-barrier photodiodes for a continuous non-invasive photoplethysmographic system

In situ fabrication of a Ti 3 C 2 T x /n-Si Schottky-barrier photodiode was achieved by post-etching treatment of a PLD-Ti 3 AlC 2 film. The unique self-filtered NIR photoresponse behavior of the device enables accurate detection of physiological parameters.