2D MXenes: Synthesis, Properties, and Applications in Silicon‐Based Optoelectronic Devices

Abstract MXenes, a rapidly emerging class of 2D transition metal carbides, nitrides, and carbonitrides, have attracted significant attention for their outstanding properties, including high electrical conductivity, tunable work function, and solution processability. These characteristics have made MXenes highly versatile and widely adopted in the next generation of optoelectronic devices, such as perovskite and organic solar cells. However, their integration into silicon‐based optoelectronic devices remains relatively underexplored, despite silicon's dominance in the semiconductor industry. In this review, a timely summary of the recent progress in utilizing Ti‐based MXenes, particularly Ti 3 C 2 T x , in silicon‐based optoelectronic devices is provided. The composition, synthesis methods, and key properties of MXenes that contribute to their potential for enhanced device performance are focused on. Furthermore, the latest advancements in MXene applications in silicon‐based solar cells and photodetectors are discussed from fundamental and applied perspectives. Finally, the key challenges and future opportunities for the integration of MXenes in silicon‐based optoelectronic devices are outlined.