兴奋剂
碘
分析化学(期刊)
材料科学
化学
结晶学
物理化学
光电子学
色谱法
冶金
作者
Dong Liu,Chao Ding,Yao Guo,Li Hua,Yusheng Li,Dandan Wang,Yongge Yang,Yuyao Wei,Shikai Chen,Guozheng Shi,Taro Toyoda,Dong‐Won Kang,Shuzi Hayase,Qing Shen
标识
DOI:10.1021/acs.jpclett.4c01182
摘要
Iodine-doped bromide perovskite single crystals (IBPSCs) have important applications in optoelectronic fields, such as in solar cells. Currently, much research has aimed to study the phase separation phenomenon and device performance improvements in IBPSCs. However, important intrinsic photoexcited carrier dynamics are often overlooked in IBPSCs. Here, we explored the photoexcited carrier dynamics in typical iodine-doped MAPbBr3 single crystals using the excitation intensity-dependent steady-state photoluminescence (PL) and time-resolved photoluminescence (TRPL) technique. We found that the trap state density changes with an increase in the amount of doped iodine. Further, we noticed that there is an influence of carrier diffusion on the photoexcited carrier dynamics, and then, we evaluated the carrier diffusion coefficients and recombination constants via numerical simulations of the PL kinetics. Consequently, we found that the electron shallow trap-related carrier behaviors substantially impacted the PL kinetics. Our results greatly facilitate a deeper understanding of the fundamental characteristics of mixed halide perovskite material.
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