材料科学
钙钛矿(结构)
串联
钝化
抛光
三碘化物
光伏
能量转换效率
光电子学
纳米晶
薄脆饼
纳米技术
光伏系统
化学工程
冶金
电极
复合材料
电气工程
化学
图层(电子)
物理化学
色素敏化染料
电解质
工程类
作者
Sheng-Quan Fu,Jia‐Bo Le,Xuemin Guo,Nannan Sun,Wenxiao Zhang,Weijie Song,Junfeng Fang
标识
DOI:10.1002/adma.202205066
摘要
Triiodide cesium lead perovskite (CsPbI3 ) has promising prospects in the development of efficient and stable photovoltaics in both single-junction and tandem structures. However, achieving inverted devices that provide good stability and are compatible to tandem devices remains a challenge, and the deep insights are still not understood. This study finds that the surface components of CsPbI3 are intrinsically lead-poor and the relevant traps are of p-type with localized states. These deep-energy-level p traps induce inferior transfer or electrons and serious nonradiative recombination at the CsPbI3 /PCBM interface, leading to the considerable open-circuit voltage (Voc ) loss and reduction of fill factor (FF). Compared to molecular passivation, polishing treatment with 1,4-butanediamine can eliminate the nonstoichiometric components and root these intrinsically lead-poor traps for superior electron transfer. The polishing treatment significantly improves the FF and Voc of the inverted CsPbI3 photovoltaics, creating an efficiency promotion from 12.64% to 19.84%. Moreover, 95% of the initial efficiency of the optimized devices is maintained after the output operation for 1000 h.
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