光电子学
材料科学
非易失性存储器
晶体管
有机场效应晶体管
异质结
有机半导体
神经形态工程学
半导体
纳米技术
场效应晶体管
计算机科学
电气工程
人工神经网络
电压
机器学习
工程类
作者
Changsong Gao,Huihuang Yang,Enlong Li,Yujie Yan,Lihua He,Huipeng Chen,Zhixian Lin,Tailiang Guo
出处
期刊:ACS Photonics
[American Chemical Society]
日期:2021-10-06
卷期号:8 (10): 3094-3103
被引量:35
标识
DOI:10.1021/acsphotonics.1c01167
摘要
Organic field-effect transistor (OFET) memory has received widespread attention due to its easy integration, precise charge modulation, and multi-level memory. However, the performance of organic memory still needs to be improved for its practical application, and the reported technologies are strongly dependent on an additional charge-trapping layer, which increases the complexity of the device. Here, we report a heterostructured vertical organic memory transistor, which uses a p/n semiconductor bulk heterojunction as a semiconductor layer without using any additional charge-trapping layers. The device exhibits a large memory window of 52 V, and the memory ratio reaches 105 through electrical operation. Benefiting from the formation of the p/n semiconductor interface and the nanometer-scale transmission length, under the stimulation of visible light, the device achieved a 58 V memory window, high memory ratio 105, and retention characteristics of over 10 years, which is better than those of most reported optical organic memory devices. More interestingly, we found that as the level of the doping in the n-type semiconductor increased, the device could transform from nonvolatile memory to artificial synapse, which is associated with the morphology of a heterojunction structure. Hence, we demonstrate a novel technique to manufacture high-performance nonvolatile optoelectronic memory and artificial synapse, which shows great potential in OFET-based memory and neuromorphic devices.
科研通智能强力驱动
Strongly Powered by AbleSci AI