材料科学
纳米线
掺杂剂
原子层沉积
纳米尺度
纳米技术
蚀刻(微加工)
硅
同轴
平版印刷术
化学气相沉积
光电子学
纳米电子学
沉积(地质)
图层(电子)
兴奋剂
生物
沉积物
电气工程
工程类
古生物学
作者
Amar Mohabir,Daniel Aziz,Amy Brummer,Kathleen Taylor,Eric M. Vogel,Michael A. Filler
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2021-12-13
卷期号:33 (10): 105604-105604
被引量:2
标识
DOI:10.1088/1361-6528/ac3bed
摘要
We demonstrate a bottom-up process for programming the deposition of coaxial thin films aligned to the underlying dopant profile of semiconductor nanowires. Our process synergistically combines three distinct methods-vapor-liquid-solid nanowire growth, selective coaxial lithography via etching of surfaces (SCALES), and area-selective atomic layer deposition (AS-ALD)-into a cohesive whole. Here, we study ZrO2on Si nanowires as a model system. Si nanowires are first grown with an axially modulated n-Si/i-Si dopant profile. SCALES then yields coaxial poly(methyl methacrylate) (PMMA) masks on the n-Si regions. Subsequent AS-ALD of ZrO2occurs on the exposed i-Si regions and not on those masked by PMMA. We show the spatial relationship between nanowire dopant profile, PMMA masks, and ZrO2films, confirming the programmability of the process. The nanoscale resolution of our process coupled with the plethora of available AS-ALD chemistries promises a range of future opportunities to generate structurally complex nanoscale materials and electronic devices using entirely bottom-up methods.
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