Electronic structures of Zn 1− x Ga x O 1− x N x and band offsets of the ZnO/Zn 1− x Ga x O 1− x N x heterojunction across the entire concentration range from first principles

cover visible light, and the heterojunctions show type II band alignment, which would help to enhance the solar light adsorption ability and improve the carrier collection efficiency in the design and optimization of ZnO and GaN-based heterojunctions for the applications of optoelectronics and photocatalysis.