Wannier函数
紧密结合
齐次空间
对称化
从头算
工作流程
材料科学
计算机科学
理论物理学
计算化学
物理
电子结构
量子力学
化学
数学
数据库
几何学
数学分析
作者
Dominik Gresch,QuanSheng Wu,Georg W. Winkler,Rico Häuselmann,Matthias Troyer,Alexey A. Soluyanov
标识
DOI:10.1103/physrevmaterials.2.103805
摘要
Wannier tight-binding models are effective models constructed from first-principles calculations. As such, they bridge a gap between the accuracy of first-principles calculations and the computational simplicity of effective models. In this work, we extend the existing methodology of creating Wannier tight-binding models from first-principles calculations by introducing the symmetrization post-processing step, which enables the production of Wannier-like models that respect the symmetries of the considered crystal. Furthermore, we implement automatic workflows, which allow for producing a large number of tight-binding models for large classes of chemically and structurally similar compounds, or materials subject to external influence such as strain. As a particular illustration, these workflows are applied to strained III-V semiconductor materials. These results can be used for further study of topological phase transitions in III-V quantum wells.
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