铁电RAM
神经形态工程学
存储单元
晶体管
电容器
铁电电容器
记忆电阻器
电阻随机存取存储器
极化(电化学)
计算机科学
非易失性存储器
相变存储器
电子工程
电压
泄漏(经济)
铁电性
电气工程
材料科学
光电子学
内存体系结构
动态随机存取存储器
随机存取存储器
计算机硬件
工程类
经济
化学
人工神经网络
机器学习
电介质
物理化学
宏观经济学
作者
Stefan Slesazeck,Taras Ravsher,Viktor Havel,Evelyn T. Breyer,Halid Mulaosmanovic,Thomas Mikolajick
出处
期刊:International Electron Devices Meeting
日期:2019-12-01
被引量:19
标识
DOI:10.1109/iedm19573.2019.8993663
摘要
A 2TnC ferroelectric memory gain cell consisting of two transistors and two or more ferroelectric capacitors (FeCAP) is proposed. While a pre-charge transistor allows to access the single cell in an array, the read transistor amplifies the small read signals from small-scaled FeCAPs that can be operated either in FeRAM mode by sensing the polarization reversal current, or in ferroelectric tunnel junction (FTJ) mode by sensing the polarization dependent leakage current. The simultaneous read or write operation of multiple FeCAPs is used to realize compute-in-memory (CiM) algorithms that enable processing of data being represented by both, non-volatilely internally stored data and externally applied data. The internal gain of the cell mitigates the need for 3D integration of the FeCAPs, thus making the concept very attractive especially for embedded memories. Here we discuss design constraints of the 2TnC cell and present the proof-of-concept for realizing versatile (CiM) approaches by means of electrical characterization results.
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