材料科学
掺杂剂
兴奋剂
能量转换效率
化学工程
钙钛矿(结构)
钝化
图层(电子)
光电子学
纳米技术
工程类
作者
Junsheng Luo,Jianxing Xia,Hua Yang,Haseeb Ashraf Malik,Fei Han,Hongyu Shu,Xiaojun Yao,Zhongquan Wan,Chunyang Jia
出处
期刊:Nano Energy
[Elsevier]
日期:2020-04-01
卷期号:70: 104509-104509
被引量:67
标识
DOI:10.1016/j.nanoen.2020.104509
摘要
In this work, an alternative processing route for doping of hole-transporting layer (HTL) with improved hole extraction and passivation of anionic Pb–I antisite defects at the perovskite/HTL heterojunction is reported for the first time in perovskite solar cells (PSCs), referred as the infiltrated diffusion doping (INDD) method. In INDD processing, HTL is prepared by depositing the hole-transporting material and dopant sequentially in separate steps, involving deposition of the hole-transporting material (PTAA) in the first step, followed by the deposition of novel fluorine-containing hydrophobic Lewis acid dopant (LAD) in the second step, employing an orthogonal solvent with respect to the PTAA. To the best of our knowledge, it is a pioneer approach which replaces traditional blend casting doping technique for HTL. Consequently, the optimized PSC based on LAD doped PTAA by INDD processing shows a champion power conversion efficiency (PCE) of 20.32%, marking a record PCE in PSCs with a single dopant for PTAA reported to date, and superior long-term stability, retaining 93% of their initial efficiency in ambient environment without any encapsulation up to 1500 h.
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