锌黄锡矿
开路电压
太阳能电池
锡
电压
化学工程
硒化物
硫脲
光伏系统
捷克先令
能量转换效率
材料科学
光电子学
电气工程
化学
工程类
冶金
有机化学
硒
作者
Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin
标识
DOI:10.1007/s40843-020-1408-x
摘要
The limiting factor preventing further performance improvement of the kesterite (sulfide Cu2ZnSnS4 (CZTS), selenide Cu2ZnSnSe4 (CZTSe), and their alloying Cu2ZnSn(S,Se)4 (CZTSSe)) thin film solar cells is the large open-circuit voltage deficit (Voc,def) issue, which is 0.345 V for the current world record device with an efficiency of 12.6%. In this study, SnCl4 and SnCl2·2H2O were respectively used as tin precursor to investigate the Voc,def issue of dimethyl sulfoxide (DMSO) solution processed CZTSSe solar cells. Different complexations of tin compounds with thiourea (Tu) and DMSO resulted in different reaction pathways from the solution to the absorber material and thus dramatic differences in photovoltaic performance. The coordination of Sn2+ with Tu led to the formation of SnS, ZnS and Cu2S in the precursor film, which converted to selenides first and then fused to CZTSSe, resulting in poor film quality and device performance. The highest efficiency obtained from this film was 8.84% with a Voc,def of 0.391 V. The coordination of Sn4+ with DMSO facilitated direct formation of CZTS phase in the precursor film which directly converted to CZTSSe during selenization, resulting in compositional uniform absorber and high device performance. A device with an active area efficiency of 12.2% and a Voc,def of 0.344 V was achieved from the Sn4+ solution processed absorber. Furthermore, CZTSSe/CdS heterojunction heat treatment (JHT) significantly improved the performance of the Sn4+ device but had slightly negative effect on the Sn2+ device. A champion CZTSSe solar cell with a total area efficiency of 12.4% (active area efficiency of 13.6%) and a low Voc,def of 0.297 V was achieved from the Sn4+ solution. Our results demonstrate the preformed uniform CZTSSe phase enabled by Sn4+ precursor is the key for the highly efficient CZTSSe absorber. The lowest Voc,def and high efficiency achieved here shines new light on the future of CZTSSe solar cell.
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