200C Operation of Semiconductor Power Devices

There is a growing need for commercial and military power electronics to operate above 175??C. Changes in operating parameters at 200??C have been measured for four devices, an N-P-N bipolar junction transistor (BJT), an insulated gate bipolar transistor (IGBT), an N-channel metal-oxide-semiconductor field effect transistor (MOSFET), and a P-type MOS controlled thyristor (MCT). Using the results of these measurements, power supplies have been built using IGBT's and MOSFET's and operated at an ambient temperature of 200??C for up to 72 h.