光刻胶
极紫外光刻
光刻
抵抗
聚合物
平版印刷术
材料科学
紫外线
高分子化学
化学工程
纳米技术
化学
光电子学
复合材料
工程类
图层(电子)
作者
Matthias Ober,Duane R. Romer,John Etienne,Philipp Thomas,Vipul Jain,James F. Cameron,James W. Thackeray
出处
期刊:Macromolecules
[American Chemical Society]
日期:2019-01-15
卷期号:52 (3): 886-895
被引量:20
标识
DOI:10.1021/acs.macromol.8b01038
摘要
A new class of acid labile poly(aryl acetal) polymers has been developed that can be used in photoresist formulations for next-generation microlithography techniques including extreme ultraviolet (EUV) or electron beam lithography. Example polymers have been synthesized by an optimized Suzuki polycondensation protocol. They are soluble in common photoresist solvents but are insoluble in water or aqueous bases that are used to develop positive photoresists. The structural design includes further elements that are aimed at improving photoresist resolution, stability, and etch resistance. Upon acid exposure, the acetal linkages are cleaved, and the polymers degrade into phenolic terphenyl fragments, which are readily soluble in a photoresist developer. Polymer degradation has been studied by NMR and LC-MS. Lithographic formulations have been developed and tested in line-and-space patterning experiments using EUV photolithography. Optimized resist formulations achieved 22 nm resolution with line width roughness values of 5.7 nm.
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