材料科学
光电子学
光电流
压电
发光二极管
二极管
紫外线
超晶格
量子阱
光谱学
谱线
铟
量子限制斯塔克效应
光学
激光器
物理
复合材料
量子力学
天文
作者
Abu Bashar Mohammad Hamidul Islam,Jong‐In Shim,Dong Soo Shin
标识
DOI:10.1109/jqe.2019.2928370
摘要
The piezoelectric field in InGaN/AlGaN-based multiple-quantum-well (MQW) near-ultraviolet light-emitting diodes (LEDs) was measured by electroreflectance and photocurrent spectroscopies. At forward and reverse biases, both electroreflectance and photocurrent spectra were studied by utilizing similar-structure samples with indium contents of ~4.5%, ~5.5%, ~6.5%, and ~7.5%. The influence of MQW and superlattice structures on the electroreflectance spectra was interactively identified. The relation between the defects and the diffusion of Mg acceptors through the defects into the MQWs was also observed and systematically confirmed through the capacitance-voltage characteristics. The effects of diffused Mg acceptors on electroreflectance spectra, depletion width, and the piezoelectric field were found. The strain relaxation caused by the defects was also systematically investigated. The calculated piezoelectric fields of these samples were in good agreement with the theoretically calculated values.
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