电容
电容器
低压差调节器
跌落电压
回转率
电气工程
控制理论(社会学)
电压
CMOS芯片
拓扑(电路)
电压调节器
电子工程
计算机科学
物理
工程类
控制(管理)
人工智能
量子力学
电极
作者
Mo Huang,Haigang Feng,Yan Lü
标识
DOI:10.1109/tpel.2019.2904622
摘要
The flipped-voltage-follower-based low-dropout regulator (LDO) has drawn attention for its fast response and reduced complexity, while super source follower can be combined to push the pole at the gate of the pass device to high frequency. But the maximum load current and minimum load capacitance of this topology are limited, especially when the poles and zero from the SSF are omitted in previous designs. This paper proposes a solution to extend the ranges of the load current and load capacitance, by implementing a small feed-forward capacitor (C F ) and a damping factor control circuitry. In addition, a slew rate enhancement circuit is applied to reduce the voltage undershoot. The proposed LDO is verified in a 65-nm CMOS process with 0.008 mm 2 active area. The measured voltage undershoot is 80 mV with a load steps from 100 μA to 50 mA with 2-ns edge times, with no external capacitor. And the maximum load capacitance can be extended to 2 nF. A figure-of-merit of 0.8 mV is achieved.
科研通智能强力驱动
Strongly Powered by AbleSci AI