Modeling and parameter extraction method for AlGaN/GaN HEMT

Parameter extraction procedure, depending on the cold-FET condition, a small signal equivalent circuit model of AlGaN/GaN High Electron Mobility Transistor (HEMT) is presented in this paper. The presented approach can successfully model the GaN HEMT device and extract the small signal model parameters for a wide range of frequencies and bias values. It also includes the results of extraction obtained from the measured data taken at multiple bias conditions. Finally, it has been demonstrated that the reported parameter extraction technique shows good consistency of the measured and the modeled S-parameters up to 14GHz.