材料科学
化学气相沉积
成核
沉积(地质)
纳米技术
汽化
微型反应器
硅
透射电子显微镜
纳米线
可视化
纳米尺度
原位
氮化硅
氮化物
高分辨率透射电子显微镜
薄膜
纳米颗粒
脉冲激光沉积
作者
Shaotong Hu,Muyu Yan,Ming Li,Ying Chen,Ran Guo,Tao Lu,Xinxin Li,Pengcheng Xu
出处
期刊:Nano Letters
[American Chemical Society]
日期:2026-06-18
卷期号:26 (27): 8642-8650
标识
DOI:10.1021/acs.nanolett.6c00814
摘要
Despite the critical role of chemical vapor deposition (CVD) in materials preparation, real-time nanoscale visualization of its processes remains challenging, primarily because conventional single-heating-zone in situ transmission electron microscopy (TEM) reactors cannot faithfully replicate realistic precursor vaporization and deposition conditions. Here, we present the TempTwin CVD-Reactor, a dual-heating-zone gas-phase in situ TEM chip that precisely integrates independently controlled source and deposition regions. Leveraging ultrathin silicon nitride windows, this device achieves angstrom-level resolution up to 900 °C, enabling direct visualization of metal–organic framework (MOF) film growth kinetics. Our observations reveal that ZIF-8 CVD deposition on ZnO nanowires follows a Volmer–Weber island growth mode─discrete nucleation and subsequent coalescence─rather than a layer-by-layer mechanism. By quantitatively tracking shell-thickness evolution and confirming composition via energy-dispersive X-ray spectroscopy, this TempTwin CVD-Reactor enables realistic simulation of key CVD conditions for MOF growth and provides critical insights into gas–solid reaction mechanisms.
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