Metal-Induced Oxygen Vacancy Control in InGaZnO/Hf 0.5 Zr 0.5 O 2 Ferroelectric Field-Effect Transistor Arrays for Simultaneous Improvement of Memory Window and Electrical Stability

cycles, and a projected retention time of 10 years. To validate array-level feasibility, a 16 × 16 FeFET array is successfully implemented based on optimized conditions, demonstrating strong potential for scalable and industry-compatible integration of oxide-semiconductor-based FeFETs into next-generation nonvolatile memory technologies.