绝缘栅双极晶体管
转身(生物化学)
缓冲器(光纤)
材料科学
晶体管
光电子学
电压
双极结晶体管
击穿电压
电气工程
化学
工程类
生物化学
作者
Ki Yeong Kim,Joo Seok Noh,Tae Young Yoon,Jang Hyun Kim
出处
期刊:Micromachines
[MDPI AG]
日期:2021-11-19
卷期号:12 (11): 1422-1422
被引量:1
摘要
In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and breakdown voltage. The electrical characteristics of the devices were simulated by using the Synopsys Sentaurus technology computer-aided design (TCAD) simulation tool, and we compared the conventional SJBT with SJBT with separated n-buffer layers. The simulation tool result shows that turn-off loss (Eoff) drops by about 7% when on-state voltage (Von) and breakdown voltage (BV) are similar. Von increases by about 0.5% and BV decreases by only about 0.8%.
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