Extraction of the components of effective mobility in thin films

Abstract In thin films, we deal with such a physical phenomenon as the coupling-effect. In this study, this effect was used to redistribute charge carriers in silicon-on-insulator thin films to determine the effective mobility near the interface under study. Temperature dependences of mobility were applied to experimental results to extract components of effective mobility related to phonon and interface roughness scattering of the carriers. These components are more suitable to show differences in the interface quality of films than values of effective mobility. The suggested approach can be used for the non-destructive analysis of interface quality in films.