Calculation of the electronic structure of carbon films using electron energy loss spectroscopy

带隙 电子能量损失谱 Kramers–Kronig关系 光谱学 材料科学 电子结构 无定形固体 无定形碳 吸收光谱法 吸收(声学) 分子物理学 化学 原子物理学 光电子学 光学 折射率 纳米技术 物理 计算化学 结晶学 量子力学 透射电子显微镜 复合材料
作者
I. Alexandrou,A. J. Papworth,B. Rafferty,G.A.J. Amaratunga,Christopher J. Kiely,L. M. Brown
出处
期刊:Ultramicroscopy [Elsevier]
卷期号:90 (1): 39-45 被引量:10
标识
DOI:10.1016/s0304-3991(01)00123-1
摘要

The detailed understanding of the electronic properties of carbon-based materials requires the determination of their electronic structure and more precisely the calculation of their joint density of states (JDOS) and dielectric constant. Low electron energy loss spectroscopy (EELS) provides a continuous spectrum which represents all the excitations of the electrons within the material with energies ranging between zero and about 100 eV. Therefore, EELS is potentially more powerful than conventional optical spectroscopy which has an intrinsic upper information limit of about 6 eV due to absorption of light from the optical components of the system or the ambient. However, when analysing EELS data, the extraction of the single scattered data needed for Kramers–Kronig calculations is subject to the deconvolution of the zero loss peak from the raw data. This procedure is particularly critical when attempting to study the near-bandgap region of materials with a bandgap below 1.5 eV. In this paper, we have calculated the electronic properties of three widely studied carbon materials; namely amorphous carbon (a-C), tetrahedral amorphous carbon (ta-C) and C60 fullerite crystal. The JDOS curve starts from zero for energy values below the bandgap and then starts to rise with a rate depending on whether the material has a direct or an indirect bandgap. Extrapolating a fit to the data immediately above the bandgap in the stronger energy loss region was used to get an accurate value for the bandgap energy and to determine whether the bandgap is direct or indirect in character. Particular problems relating to the extraction of the single scattered data for these materials are also addressed. The ta-C and C60 fullerite materials are found to be direct bandgap-like semiconductors having a bandgaps of 2.63 and 1.59 eV, respectively. On the other hand, the electronic structure of a-C was unobtainable because it had such a small bandgap that most of the information is contained in the first 1.2 eV of the spectrum, which is a region removed during the zero loss deconvolution.
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