A Study on the High Figure of Merit of Perovskite Pyroelectric thin Films

In order to obtain pyroelectric film materials with excellent performance,the article discusses the improved ways and influencing factors of pyroelectric figure of merit. The main research work focuses on two aspects: improving the pyroelectric coefficient( development of new material systems and doping original material)and lowering dielectric constant( porous / multilayer film structure design). Generally speaking,the former can not improve pyroelectric figure of merit increase effectively,and the latter results in the cracking of the film quality,which will make leakage current density increase greatly. Combining the respective advantages of the porous and multilayer films,by introducing a seed layer between film and electrode interlayer,low temperature crystallization of dense / porous / dense sandwich structure film are achieved,which gives an effective way to improve the detectivity figure of merit of pyroelectric thin film. Meanwhlie,the low temperature crystallization of the composite film has an important value in integrating circuit based on a silicon chip.