硅
镓
接受者
铟
深能级瞬态光谱
硼
掺杂剂
材料科学
氧气
杂质
兴奋剂
空位缺陷
分析化学(期刊)
化学
结晶学
光电子学
冶金
凝聚态物理
有机化学
物理
色谱法
作者
Joyce Ann T. De Guzman,В. П. Маркевич,I.D. Hawkins,J. Coutinho,Hussein M. Ayedh,Jeff Binns,N. V. Abrosimov,Stanislau B. Lastovskii,Iain F. Crowe,Matthew P. Halsall,А. R. Peaker
摘要
It is well established that boron reacts with two oxygen atoms in Czochralski-grown silicon (Cz-Si) to form a defect, which is responsible for the dominant light-induced degradation (LID) in solar cells made from Cz-Si:B material. The detrimental effect of LID has stimulated a move by solar cell manufacturers to the use of silicon with other group-III dopants, particularly with gallium. Cz-Si:Ga is immune to the BO-type LID. The information available in the literature on the interactions of oxygen with either Al, Ga, or In impurities in Si is limited. We use ab initio modeling and junction spectroscopy techniques to study a family of defects with unusual electronic properties, which have been detected in Cz-Si samples doped with different shallow acceptor species. We have carried out detailed measurements of the temperature dependencies of hole emission rate, equilibrium occupancy, and hole capture kinetics for the traps observed in differently doped p-type Cz-Si samples. It is found from the analysis of the changes in magnitude of the deep-level-transient signals with temperature that the equilibrium occupancy function of the traps is characteristic for a defect with negative-U properties in all the samples. The positions of the E(−/+) occupancy level of the defects are very close in differently doped samples, E(−/+) = Ev + (0.31 ± 0.01) eV. It is argued that the oxygen dimer interacts with group-III atoms in silicon and these interactions result in the formation of AsO2 complexes (A is either B, Al, Ga, or In atom) with very similar electronic properties.
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